Arturs MEDVIDS

Professor Arturs MEDVIDS (Artur Medvid) Head of the Laboratory of Semiconductor Physics Institute of Technical Physics Riga Technical University Azenes iela 14 Riga, LV 1068 Latvia Phone: +371 708 9445; +371 708 9376 Fax: +371 761 5765 E-mail: [email protected]

Born: March 10, 1942, Velsk, Krievija

Languages: Ukrainian, Latvian, English, Russian.

• Investigation of the semiconductors (Si, Ge, InSb, Te, CdHgTe) properties under nonequilibrium conditions in nonhomogeneous electric, magnetic and temperature fields.
• Transport process in semiconductors, metal (CoSi₂) and dielectrics (SiO₂, Si₃N₄).
• Interaction of laser beam with solid materials.
• Formation of nanostructures on a surface of semiconductors.

• Kiev State University, specialisation Optics and Spectroscopy, 1968
• Dr. phys., (Candidate of Science in former USSR, Ph.D. in western countries), specialisation Physics of Semiconductors and Dielectrics, Vilnius State University, Lithuania, 1979.
• Dr.habil.phys., University of Latvia, 1994.

Riga Technical University:

• Professor, 1994 -
• Associated Professor, Physics Department, 1983-1995
• Head of Laboratory of Semiconductor Physics, 1989 -
• Lecturer, Physics Department, 1975-1983

Ukrainian Academy of Sciences:

• Senior Engineer, Institute of Semiconductors, 1969-1975
• Engineer, Institute of Physics, 1967-1969
• Laboratory Assistant, Institute of Electric Welding, 1959-1967

• Invited speaker at the 12^th International Conference on solid Films and Surfaces, Hamamatsu, Japan, 2004.
• Chairman of section at the 12^th Annual International Conference on Composites/nanoEngineering, 2005.
• Invited professor in Research Institute for Electronics of Shizuoka University, Hamamatsu, Japan, 2001.
• Member of the Advisory Committee, 9th, 10th Symposium on Ultrafast phenomena in Semiconductors, Vilnius, Lithuania, 1995, 1998, 2004.
• Member of the Advisory and Program Committee:

- SPIE Conf. on Optical Storage, Imaging, and Transmission of Information, Kiev, Ukraine, 1996, 1998;

- SPIE Conf. Material Science and Material Properties of IR Optoelectronics, Uzhgorod, Ukraine, 1996.

• Member of the Organising Committee and Chair / Editor at the SPIE Conf. Optical Materials and Devices, Riga, Latvia, 1996.
• Member of Editorial Board of journal Material Science, Kaunas University of Technology, Lithuania (ISSN1392-1320).
• Member, New York Academy of Sciences, USA
• Member, Union of Latvian Scientists.
• Member, SPIE, Latvian Physics Society
• Member, Association of Latvian Physicists (member of the European Physical Society).
• Consultant, Institute of Semiconductor Physics, Academy of Science of Ukraine, Kiev
• Expert, Journal of Applied Physics.

• Intern. School-Conference Solid State Physics: Fundamental and Application, 1989 (Alushta), 1997 (Katsyaveli), Ukraine.
• Kiev State University, Ukraine, 1994
• Nordic- Baltic School – Conference Semiconductors Technology, Vilnius, Lithuania, 1995.

• General Physics
• Physics of Semiconductors
• Optoelectronics devices
• Surface Science
• Laser Technology in Microelectronics

• A. Medvid’, Y. Fukuda, A. Michko, P. Onufrievs , and Y. Anma. 2D lattice formation on a surface of Ge single crystal by YAG:Nd laser. – Applied Surface Science, 2005, vol. 244/1-4, pp. 120-123.
• A. Medvid’, A. Mychko, A. Krivich, and P. Onufrijevs. Formation of pores in Ge single crystal by laser radiation. – Applied Surface Science, 2005, vol. 244/1-4, pp.203-208.
• A. Medvid’, B. Berzina, L. Trinkler, L. Fedorenko, P. Lytvyn, N.Yusupov, T. Yamaguchi, L. Sirghi, and M. Aoyama. Formation of nanostructure on surface of SiC by laser radiation. – Phys. Stat. Sol. (a), 2003, vol.195, No.1, pp. 199-203.
• A. Medvid’( Invited paper). Redistribution of the Point Defects in Crystalline Lattice of Semiconductor in Nonhomogeneous Temperature Field. - In: Defect and Diffusion Forum, Vols. 2002, 210-212 (Defects and Diffusion in Semiconductors - an Annual Retrospective) , pp.89-101.
• A. Medvid’, Y. Hatanaka, D. Korbutjak, L. Fedorenko, S. Krilyuk, and V.Snitka. Generation of the A-centres at the surface of CdTe(Cl) by YAG:Nd laser radiation. – Applied Surface Science, 2002, vol.197-198, pp.124-129.
• A. Medvid’ and L. Fedorenko. Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors. - Applied Surface Science, 2002, vol.197-198, pp. 877-882.

• A.Medvid (Head of Project). Influence of the Laser Radiation on Silicide Layer, Metal-Semiconductor Contacts and Buried Layer Formation. Latvian Council of Science (1991-1993).
• A.Medvid (Head of Project). The Investigation of the Mechanism of Laser Annealing of Silicon on Isolator (SOI) Structures. Latvian Council of Science (1994-1996).
• A.Medvid (Head of Project). Dynamics of Formation of Buried Layer and Investigation of the Centres Generated by Laser Radiation. Latvian Council of Science (1997-1999).
• A.Medvid (Head of Project). Diffusion of Atoms in Crystalline Lattice in Nonhomogeneuos Temperature in Electric Field.  Latvian Council of Science (2001 - 2004).
• A.Medvid (Head of Project). Nanostructures formation on a surface of semiconductors by laser radiation. Latvian Council of Science (2005 - 2008).

Last update 02.10.2005